Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower gate charge BV
DSS
20V
▼ Capable of 2.5V gate drive R
DS(ON)
50mΩ
▼ Single Drive Requirement I
D
4A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 100 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 1.25
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.01
Continuous Drain Current, V
GS
@ 4.5V
3
2.5
Pulsed Drain Current
1
12
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
3
4
Parameter Rating
Drain-Source Voltage 20
Pb Free Plating Product
201224031
AP9452GG
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
±16
G
D
S
D
G
D
S
SOT-89