Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BV
DSS
-30V
▼ Fast Switching Characteristic R
DS(ON)
50mΩ
▼ Single Drive Requirement I
D
- 4.2A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 100 ℃/W
Data and specifications subject to change without notice 201021051-1/4
AP9435GG
Rating
- 30
±20
- 4.2
0.01
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
3
Storage Temperature Range
Continuous Drain Current, V
GS
@ 4.5V
3
-3.4
Pulsed Drain Current
1
-20
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation 1.25
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor
G
D
S
D
G
D
S
SOT-89
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.