Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY
Electronics Corp. DIODE
▼ Low On-Resistance BV
DSS
20V
▼ Fast Switching Characteristic R
DS(ON)
600mΩ
▼ Included Schottky Diode I
D
1A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
KA
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
I
F
A
I
FM
A
P
D
@T
A
=25℃ W
Total Power Dissipation (Schottky) W
T
STG
Storage Temperature Range ℃
T
J
Operating Junction Temperature Range ℃
Symbol Value Units
Rthj-a Thermal Resistance Junction-ambient
3
(MOSFET) Max. 110 ℃ /W
Thermal Resistance Junction-ambient
3
(Schottky) Max. 110 ℃ /W
Data and specifications subject to change without notice
Pulsed Drain Current
1
(MOSFET) 8
2
Total Power Dissipation (MOSFET) 0.9
Average Forward Current (Schottky) 0.5
Pulsed Forward Current
1
(Schottky)
Continuous Drain Current
3
(MOSFET) 1
Continuous Drain Current
3
(MOSFET) 0.8
-55 to 125
-55 to 125
Parameter Rating
Drain-Source Voltage (MOSFET) 20
Reverse Voltage (Schottky) 20
Gate-Source Voltage (MOSFET) ±6
AP6924GEY
0.9
Pb Free Plating Product
Thermal Data
Parameter
200301051
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
S
G
A
A
K
SOT-26
K
A
G
D
S