Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BV
DSS
-30V
▼ Simple Drive Requirement R
DS(ON)
24mΩ
▼ Dual P MOSFET Package I
D
-7.7A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice 200420041
AP4957M
Rating
-30
±20
-7.7
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
-6.1
Pulsed Drain Current
1
-30
2
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.016
Storage Temperature Range
Thermal Data
Parameter
Total Power Dissipation
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
D2
S2
G1
D1
S1