Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
-20V
▼ Low Gate Charge R
DS(ON)
45mΩ
▼ Fast Switching Characteristic I
D
-5.6A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation 2
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.016
Storage Temperature Range
Continuous Drain Current
3
-4.5
Pulsed Drain Current
1
20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Pb Free Plating Product
200303041
AP4955GM
Rating
-20
±20
-5.6
TThe Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D1
D2
D2
G2
D2
S2
G1
D1
S1