Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
25V
▼ Low On-resistance R
DS(ON)
25mΩ
▼ Fast Switching I
D
7A
Description
Absolute Maximum Ratings
Symbol Parameter Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
A
=25℃ Continuous Drain Current
3
A
I
D
@T
A
=70℃ Continuous Drain Current
3
A
I
DM
Pulsed Drain Current
1
A
P
D
@T
A
=25℃ Total Power Dissipation W
Linear Derating Factor W/℃
T
STG
Storage Temperature Range ℃
T
J
Operating Junction Temperature Range ℃
Symbol Value Unit
Rthj-amb Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice
Parameter
200305021
AP4920GM
Thermal Data
Rating
Pb Free Plating Product
-55 to 150
7
5.7
20
25
2
0.016
-55 to 150
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
± 20