Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BV
DSS
25V
▼ Fast Switching R
DS(ON)
8.5mΩ
▼ Simple Drive Requirement I
D
13A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-amb Thermal Resistance Junction-ambient
3
Max. 50 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
Total Power Dissipation 2.5
Linear Derating Factor 0.02
Continuous Drain Current
3
10
Pulsed Drain Current
1
50
Gate-Source Voltage
Continuous Drain Current
3
13
Parameter Rating
Drain-Source Voltage 25
AP4880M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
± 20
S
S
S
G
D
D
D
D
SO-8
G
D
S