Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BV
DSS
40V
▼ Good Thermal Performance R
DS(ON)
52mΩ
▼ Fast Switching Performance I
D
14A
▼ RoHS Compliant P-CH BV
DSS
-40V
R
DS(ON)
90mΩ
Description I
D
-11A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage 40 -40 V
V
GS
Gate-Source Voltage ±20 ±20 V
I
D
@T
C
=25℃ Continuous Drain Current
3
14 -11 A
I
D
@T
C
=100℃ Continuous Drain Current
3
8.7 -6.6 A
I
DM
Pulsed Drain Current
1
50 -50 A
P
D
@T
C
=25℃ Total Power Dissipation 15.6 W
Linear Derating Factor 0.125 W/℃
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case
3
Max. 8 ℃ /W
Rthj-a Thermal Resistance Junction-ambient
3
Max. 110 ℃ /W
Data and specifications subject to change without notice
Parameter
200524051-1/7
Thermal Data
AP4569GH
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
S1
TO-252-4L
G1
S2
G2
D1/D2
G2
D2
S2
G1
D1
S1