Advanced Power N with Schottky AND P-CHANNEL
Electronics Corp. ENHANCEMENT MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BV
DSS
30V
▼ Low On-resistance R
DS(ON)
36mΩ
▼ Fast Switching I
D
5.3A
P-CH BV
DSS
-30V
R
DS(ON)
60mΩ
Description I
D
-4.2A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage -30 V
V
GS
Gate-Source Voltage ±20 V
I
D
@T
A
=25℃ Continuous Drain Current
3
-4.2 A
I
D
@T
A
=70℃ Continuous Drain Current
3
-3.5 A
I
DM
Pulsed Drain Current
1
-30 A
P
D
@T
A
=25℃ Total Power Dissipation W
Linear Derating Factor W/℃
T
STG
Storage Temperature Range ℃
T
J
Operating Junction Temperature Range ℃
Symbol Value Unit
Rthj-amb Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice
-55 to 125
0.016
-55 to 150
4.3
40
2
Parameter
200221031
AP4501SSD

Thermal Data
30
±20
5.3
The Advanced Power MOSFETs from APEC provide the
design with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
AP4501SSD included N , P channel enhancement mode
power MOSFET and Shottky diode.
D1
D1
D2
D2
S1/A
G1
S2
G2
PDIP-8
G2
D2
S2
G1
D1
S1
K
A