Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BV
DSS
35V
▼ Lower Gate Charge R
DS(ON)
22mΩ
▼ Fast Switching Performance I
D
7.7A
▼ RoHS Compliant P-CH BV
DSS
-35V
R
DS(ON)
40mΩ
Description I
D
-5.7A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage 35 -35 V
V
GS
Gate-Source Voltage ±20 ±12 V
I
D
@T
A
=25℃ Continuous Drain Current
3
7.7 -5.7 A
I
D
@T
A
=70℃ Continuous Drain Current
3
6.2 -4.6 A
I
DM
Pulsed Drain Current
1
30 -30 A
P
D
@T
A
=25℃ Total Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/℃
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃ /W
Data and specifications subject to change without notice
Parameter
200408051-1/7
Thermal Data
AP4515GM
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1