Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BV
DSS
35V
▼ Low On-resistance R
DS(ON)
25mΩ
▼ Fast Switching Performance I
D
7A
P-CH BV
DSS
-35V
R
DS(ON)
40mΩ
Description I
D
-6.1A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage 35 -35 V
V
GS
Gate-Source Voltage ±20 ±20 V
I
D
@T
A
=25℃ Continuous Drain Current
3
7 -6.1 A
I
D
@T
A
=70℃ Continuous Drain Current
3
5.7 -5 A
I
DM
Pulsed Drain Current
1
30 -30 A
P
D
@T
A
=25℃ Total Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/℃
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice
Parameter
201122041
Thermal Data
AP4511M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D1
D2
D2
SO-8