Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Low Gate Charge N-CH BV
DSS
35V
▼ Fast Switching Speed R
DS(ON)
25mΩ
▼ PDIP-8 Package I
D
7A
▼ RoHS Compliant P-CH BV
DSS
-35V
R
DS(ON)
40mΩ
Description I
D
-6.1A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage 35 -35 V
V
GS
Gate-Source Voltage ±20 ±20 V
I
D
@T
A
=25℃ Continuous Drain Current
3
7 -6.1 A
I
D
@T
A
=70℃ Continuous Drain Current
3
5.7 -5 A
I
DM
Pulsed Drain Current
1
30 -30 A
P
D
@T
A
=25℃ Total Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/℃
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃ /W
Data and specifications subject to change without notice
Parameter
200621051-1/4
Thermal Data
AP4511GD
Pb Free Plating Product
G2
D2
S2
G1
D1
S1
D1
D1
D2
D2
S1
G1
S2
G2
PDIP-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.