Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BV
DSS
30V
▼ Low On-resistance R
DS(ON)
27mΩ
▼ Fast Switching Characteristic I
D
7A
P-CH BV
DSS
-30V
R
DS(ON)
49mΩ
Description I
D
-5A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage -30 V
V
GS
Gate-Source Voltage ±20 V
I
D
@T
A
=25℃ Continuous Drain Current
3
-5 A
I
D
@T
A
=70℃ Continuous Drain Current
3
-4.2 A
I
DM
Pulsed Drain Current
1
-30 A
P
D
@T
A
=25℃ Total Power Dissipation W
Linear Derating Factor W/℃
T
STG
Storage Temperature Range ℃
T
J
Operating Junction Temperature Range ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice
Pb Free Plating Product
Parameter
200504042
40
2
AP4501GSD
Thermal Data
30
±20
7
-55 to 150
0.016
-55 to 150
5.8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D1
D1
D2
D2
S1
G1
S2
G2
PDIP-8
G2
D2
S2
G1
D1
S1