Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance BV
DSS
-30V
▼ Fast Switching Speed R
DS(ON)
20mΩ
▼ PDIP-8 Package I
D
-9A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 50 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Storage Temperature Range
Continuous Drain Current
3
- 5.8
Pulsed Drain Current
1
- 50
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
201114031
AP4435D
Rating
- 30
±20
- 9
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
D
D
D
D
S
S
S
G
PDIP-8
G
D
S