Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower On-resistance BV
DSS
-35V
▼ Simple Drive Requirement R
DS(ON)
38mΩ
▼ Fast Switching Characteristic I
D
-25A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.6 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃ /W
Data and specifications subject to change without notice
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
-55 to 150
Linear Derating Factor
34.7
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Continuous Drain Current, V
GS
@ 10V -16
Pulsed Drain Current
1
-70
200428051-1/4
AP4419GH/J
Rating
-35
±20
-25
0.28
Pb Free Plating Product
G
D
S
G
D
S
TO-252(H)
G
D
S
TO-251(J)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4419GJ) is available for low-profile applications.