Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
-35V
▼ Low On-resistance R
DS(ON)
7.5mΩ
▼ Fast Switching Characteristic I
D
-14.5A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3a
Max 50 ℃/W
Data and specifications subject to change without notice
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current
3a
-12
Pulsed Drain Current
1
-50
0.02
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3a
200327063-1/4
AP4409GEM
Rating
-35
±20
-14.5
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
S
S
S
G
D
D
D
D
SO-8
G
D
S