AM82223 - 018
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DESCRIPTION:
The AM82223 - 018 is a common base, silicon NPN bipolar transistor
designed for high gain and efficiency in hi - rel aerospace telemetry
applications in the 2.2 - 2.3 GHz frequency range.
It incorporates internal inpu t and output impedance matching
structures along with a rugged, emitter - site ballasted overlay die
geometry capable of withstanding ∞:1 load mismatch at any phase
angle under full rated operating conditions..
The AM82223 - 018 is provided in the industry - sta ndard AMPAC 
metal/ceramic hermetic package.


ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C)
Symbol Parameter Value Unit
P DISS Power Dissipation 58.3 W
I C Device Current* 3.0 A
V CC Collector - Supply Voltage* 28 V
T J Junctio n Temperature 200 °C
T STG Storage Temperature - 65 to +200 °C

Thermal Data
R TH(J - C)

Junction - case Thermal Resistance

3.0 °C/W


Features
• REFRACTORY/GOLD METALLIZATION
• EMITTER SITE BALLASTED
• ∞:1 VSWR CAPABILITY AT RATED CONDITIONS
• LOW THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• P OUT = 18 W MINIMUM WITH G P = 6.5 dB GAIN MINIMUM
• C OMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936 - 1013
PHONE: (215) 631 - 9840
FAX: (215) 631 - 9855