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1517-250M
250 Watts, 40 Volts, 200µs, 10%
Radar 1480 to 1650 MHz

GENERAL DESCRIPTION
The 1517-250M is an internally matched, COMMON BASE transistor capable
of providing 250 Watts of pulsed RF output power at 200 microseconds pulse
width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically
solder-sealed transistor is specifically designed for upper L-Band radar
applications. It utilizes gold metallization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55ST-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
1
700 W
Maximum Voltage and Current
Collector to Base Voltage (BV
CES
) 70 V
Emitter to Base Voltage (BV
EBO
) 3 V
Collector Current (I
C
) 20 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C


FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Output 250 280 350 W
P
g
Power Gain 7.0 8.5 dB
η
c
Collector Efficiency 38 40 %
IR
L
Input Return Loss
9 dB
Pd
Pulse Droop
F = 1480-1650 MHz
V
CC
= 40 Volts
Pin = 50 W
Pulse Width = 200µs
Duty Factor = 10%
0.5 dB
VSWR
1
Load Mismatch Tolerance F=1480 MHz, Pin = 50W 3.0:1
ELECTRICAL CHARACTERISTICS @ 25°C
I
EBO
Emitter Cutoff Current V
EB
= 3 V 20 mA
BV
CES
Collector to Emitter Breakdown I
C
= 100 mA 70 V
h
FE
DC – Current Gain V
CE
= 5V, I
c
= 1A 20
θjc
1
Thermal Resistance 0.25 °C/W
NOTES: 1. Pulse condition of 200µsec, 10%


Issue Jan 2006