1214-150L
器件描述：150 Watts, 36 Volts, 5 ms, 20% Radar 1200 to 1400 MHz
器件厂商：ADPOW [Advanced Power Technology]
文件大小：87.05KB，共4页
Sponsor by e络盟器件资料摘要：
1214-150lR2
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1214-150L
150 Watts, 36 Volts, 5 ms, 20%
Radar 1200 to 1400 MHz
GENERAL DESCRIPTION
The 1214-150L is an internally matched, COMMON BASE transistor capable
of providing 150 Watts of pulsed RF output power at 5 milliseconds pulse
width, 20% duty factor across the band 1200 to 1400 MHz. This hermetically
solder-sealed transistor is specifically designed for L-Band radar applications. It
utilizes gold metallization and diffused emitter ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55ST-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C1 320 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 70 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 15 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output 140 150 200 W
Pg Power Gain 7.15 8.7 dB
ηc Collector Efficiency 45 %
RL Return Loss -9 dB
Pd Pulse Droop
F = 1200-1400 MHz
Vcc = 36 Volts
Pin = 27 W
Pulse Width = 5 mS
Duty Factor = 20%
0.5 dB
VSWR1 Load Mismatch Tolerance F=1200 MHz, Pin = 27W 3.0:1
FUNCTIONAL CHARACTERISTICS @ 25 C
BVebo Emitter to Base Breakdown Ie = 50 mA 3.0 V
BVces Collector to Emitter Breakdown Ic = 100 mA 65 V
hFE DC – Current Gain Vce = 5V, Ic = 1A 20 55
θjc1 Thermal Resistance 0.55 °C/W
NOTES: 1. Pulse condition of 5 mS, 20%
April 2005
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1214-150L
150 Watts, 36 Volts, 5 ms, 20%
Radar 1200 to 1400 MHz
GENERAL DESCRIPTION
The 1214-150L is an internally matched, COMMON BASE transistor capable
of providing 150 Watts of pulsed RF output power at 5 milliseconds pulse
width, 20% duty factor across the band 1200 to 1400 MHz. This hermetically
solder-sealed transistor is specifically designed for L-Band radar applications. It
utilizes gold metallization and diffused emitter ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55ST-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C1 320 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 70 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 15 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output 140 150 200 W
Pg Power Gain 7.15 8.7 dB
ηc Collector Efficiency 45 %
RL Return Loss -9 dB
Pd Pulse Droop
F = 1200-1400 MHz
Vcc = 36 Volts
Pin = 27 W
Pulse Width = 5 mS
Duty Factor = 20%
0.5 dB
VSWR1 Load Mismatch Tolerance F=1200 MHz, Pin = 27W 3.0:1
FUNCTIONAL CHARACTERISTICS @ 25 C
BVebo Emitter to Base Breakdown Ie = 50 mA 3.0 V
BVces Collector to Emitter Breakdown Ic = 100 mA 65 V
hFE DC – Current Gain Vce = 5V, Ic = 1A 20 55
θjc1 Thermal Resistance 0.55 °C/W
NOTES: 1. Pulse condition of 5 mS, 20%
April 2005