10502
500 Watts, 50 Volts, Pulsed
Avionics 1030 / 1090 MHz




GENERAL DESCRIPTION
The 10502 is a high power COMMON BASE bipolar transistor. It is designed
for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width
and duty required for MODE-S &TCAS applications. The device has gold thin-
film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.

CASE OUTLINE
55SM-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
o
C
1
1458 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 40 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200
o
C
Operating Junction Temperature + 230
o
C



ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Output

F = 1030/1090 MHz 500 W
P
g
Power Gain

V
cc
= 50 Volts 8.5 dB
P
out
Power Input

PW = 32 µsec, DF = 2% 70 W
η
c
Collector Efficiency 40 %
R
L
Return Loss -10 dB
VSWR Load Mismatch Tolerance
1
F = 1090 MHz 10:1


BVebo
BVces
h
FE

θjc
1


Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance

Ie = 50 mA
Ic = 100 mA
Ic = 5 A, Vce = 5 V


3.5
65
20










0.12

Volts
Volts

o
C/W
Note 1: At rated output power and pulse conditions


Rev. - Sep 1998
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.