EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

1014-6A

器件描述:6 Watts, 28 Volts, Class C Microwave 1000 - 1400 MHz
器件厂商:ADPOW [Advanced Power Technology]
文件大小:163.34KB,共1页
Sponsor by e络盟
器件资料摘要:
1014-6A
6 Watts, 28 Volts, Class C
Microwave 1000 - 1400 MHz

GENERAL DESCRIPTION
The 1014-6A is an internally matched, COMMON BASE transistor capable of
providing 6 watts of CW RF Output power across the 1000-1400 MHz band.
This transistor is specifically designed for microwave broadband applications.
It utilizes gold metalization and diffused ballasting to provide high reliability
and superior ruggedness.
CASE OUTLINE
55LV-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C 19 W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
) 50 V
Emitter to Base Voltage (BV
ebo
) 3.5 V
Collector Current (I
c
) 1.0 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C



ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Output

F = 1150 MHz 6.0 W
P
in
Power Input 1.2 W
P
g
Power Gain

V
cc
= 35 Volts 7.0 7.5 dB
η
c
Collector Efficiency 40 %
VSWR Load Mismatch Tolerance

Pulse width = 20 µs
LTDF = 1%
10:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
Emitter to Base Breakdown Ie = 3.0 mA 3.5 V
BV
ces
Collector to Emitter Breakdown Ic = 25 mA 50 V
I
cbo
Collector Leakage Current Vcb = 28 V 1.0 mA
C
ob
Capacitance Vcb = 28 V, f = 1 MHz 6.5 pF
h
FE
DC – Current Gain Vce = 5V, Ic = 100 mA 20 100
θjc
1
Thermal Resistance 9.0 °C/W

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECTLY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120