Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower On- resistance BV
DSS
30V
▼ Simple Drive Requirement R
DS(ON)
4mΩ
▼ Fast Switching Characteristic I
D
75A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@Tc=25℃ A
I
D
@Tc=100℃ A
I
DM
A
P
D
@Tc=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 1.3 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data and specifications subject to change without notice 200120041
AP90T03GR
Pb Free Plating Product
Parameter Rating
Drain-Source Voltage 30
Gate-Source Voltage ±20
Continuous Drain Current, V
GS
@4.5V 75
Continuous Drain Current, V
GS
@4.5V 63
Pulsed Drain Current
1
350
Total Power Dissipation 96
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.7
Thermal Data
Parameter
Storage Temperature Range
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)