Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Dynamic dv/dt Rating BV
DSS
200V
▼ Repetitive Avalanche Rated R
DS(ON)
400mΩ
▼ Fast Switching I
D
9A
▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
E
AS
mJ
I
AR
A
E
AR
Repetitive Avalanche Energy mJ
T
STG
℃
T
J
℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 1.7 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice
AP630GP
Parameter Rating
Pb Free Plating Product
200Drain-Source Voltage
Gate-Source Voltage
9
5.7
36
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
74
0.59
240
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
9
7
Avalanche Current
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
200219032
Parameter
± 30
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP630GP) is available for low-profile
applications.
G
D
S
TO-220
G
D
S