Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BV
DSS
30V
▼ Fast Switching R
DS(ON)
13.5mΩ
▼ Simple Drive Requirement I
D
55A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 2.0 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 62.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.5
Continuous Drain Current, V
GS
@ 10V 35
Pulsed Drain Current
1
215
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V 55
Parameter Rating
Drain-Source Voltage 30
200218032
AP60N03S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03P) is available for low-profile applications.
± 20
G
D
S TO-263
G
D
S