Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BV
DSS
30V
▼ Simple Drive Requirement R
DS(ON)
26mΩ
▼ Dual N MOSFET Package I
D
6.8A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-amb Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice 201016031
AP4228M
Parameter Rating

Drain-Source Voltage 30
Gate-Source Voltage ± 20
Continuous Drain Current
3
6.8
Continuous Drain Current
3
5.5
Pulsed Drain Current
1
40
Total Power Dissipation 2
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.016
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D1
D2
D2
SO-8