Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower On-resistance BV
DSS
-30V
▼ Simple Drive Requirement R
DS(ON)
14mΩ
▼ Fast Switching Characteristic I
D
-50A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 2.3 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data and specifications subject to change without notice
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
-55 to 150
Linear Derating Factor
54
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Continuous Drain Current, V
GS
@ 10V -32
Pulsed Drain Current
1
180
200218051
AP4407GR
Rating
-30
±25
-50
0.4
Pb Free Plating Product
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)