Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BV
DSS
30V
▼ Simple Drive Requirement R
DS(ON)
18mΩ
▼ Dual N MOSFET Package I
D
8.7A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃ /W
Data and specifications subject to change without notice 200508061-1/4
AP4226AGM
Rating
30
±20
8.7
0.016
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current
3
7
Pulsed Drain Current
1
40
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation 2
-55 to 150
Operating Junction Temperature Range -55 to 150
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.