Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BV
DSS
30V
▼ Single Drive Requirement R
DS(ON)
25mΩ
▼ Lower On-resistance I
D
28A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=100℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 5 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 25
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.2
Continuous Drain Current, V
GS
@ 10V 18
Pulsed Drain Current
1
95
Gate-Source Voltage ±25
Continuous Drain Current, V
GS
@ 10V 28
Parameter Rating
Drain-Source Voltage 30
201121051-1/4
AP40T03GI
Pb Free Plating Product
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)