Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BV
DSS
30V
▼ Low On-resistance R
DS(ON)
40mΩ
▼ Fast Switching Performance I
D
5A
P-CH BV
DSS
-30V
R
DS(ON)
80mΩ
Description I
D
-3.3A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage 30 -30 V
V
GS
Gate-Source Voltage ±20 ±20 V
I
D
@T
A
=25℃ Continuous Drain Current
3
5 -3.3 A
I
D
@T
A
=70℃ Continuous Drain Current
3
3.9 -2.7 A
I
DM
Pulsed Drain Current
1
20 -20 A
P
D
@T
A
=25℃ Total Power Dissipation 1.38 W
Linear Derating Factor 0.01 W/℃
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice
Parameter
200817041
AP2851GO
Thermal Data
Pb Free Plating Product
G2
D2
S2
G1
D1
S1
D2
S2
S2
G2
D1
S1
S1
G1
TSSOP-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.