Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower On-resistance BV
DSS
-30V
▼ Simple Drive Requirement R
DS(ON)
28mΩ
▼ Fast Switching Characteristic I
D
-30A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 4 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃ /W
Data and specifications subject to change without notice 200407062-1/4
AP40P03GI
Rating
-30
±20
-30
0.25
Pb Free Plating Product
Continuous Drain Current, V
GS
@ 10V -18
Pulsed Drain Current
1
-120
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Linear Derating Factor
31.3
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
G
D
S
G
D
S
TO-220CFM(I)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.