Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BV
DSS
-30V
▼ Simple Drive Requirement R
DS(ON)
200mΩ
▼ Fast Switching I
D
- 10A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-case Thermal Resistance Junction-case Max. 3.4 ℃/W
Rthj-amb Thermal Resistance Junction-ambient Max. 110 ℃/W
Data and specifications subject to change without notice
Pb Free Plating Product
200505031
AP3403GH/J
Rating
- 30
± 20
-10
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current -8.6
Pulsed Drain Current
1
-48
36.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.29
Storage Temperature Range
Thermal Data
Parameter
Total Power Dissipation
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-252/TO-251 package is universally used for all commercial-
industrial application.
G
D
S
G
D
S
TO-252(H)
G
D
S
TO-251(J)