Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance BV
DSS
35V
▼ Single Drive Requirement R
DS(ON)
18mΩ
▼ Surface Mount Package I
D
38A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.6 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃ /W
Data and specifications subject to change without notice 200420052-1/4
AP3402GEH/J
Pb Free Plating Product
Parameter Rating
Drain-Source Voltage 35
Gate-Source Voltage ±20
Continuous Drain Current, V
GS
@ 10V 38
Continuous Drain Current, V
GS
@ 10V 24
Pulsed Drain Current
1
110
Total Power Dissipation 34.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.27
Thermal Data
Parameter
Storage Temperature Range
G
D
S TO-252(H)
G
D
S
TO-251(J)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3402GEJ) are available for low-profile applications.
G
D
S