Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower On-resistance BV
DSS
650V
▼ Fast Switching Characteristic R
DS(ON)
1Ω
▼ Simple Drive Requirement I
D
10A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
I
AR
Avalanche Current
2
A
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 1.2 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃ /W
Data & specifications subject to change without notice
10
4.4
Storage Temperature Range -55 to 150
18
104
Linear Derating Factor 0.8
Rating
650
±30

Pb Free Plating Product
200503061-1/4
AP2761R-A
-55 to 150
Parameter
10
Parameter
G
D
S
The TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,AC-DC
converters for power applications.
G
D
S
TO-262(R)
AP2761 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.Both and TO-
262 type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.