Advanced Power N-CHANNEL INSULATED GATE
Electronics Corp. BIPOLAR TRANSISTOR
▼ High Input Impedance V
CE
▼ High Pick Current Capability I
CP
▼ 3.3V Gate Drive
▼ Strobe Flash Applications
Absolute Maximum Ratings
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol Min. Typ. Max. Units
I
GES
- - 10 uA
I
CES
- - 10 uA
V
CE(sat)
- 3.8 6 V
V
GE(th)
--1V
Q
g
- 74 120 nC
Q
ge
-8-nC
Q
gc
-34-nC
t
d(on)
-20-ns
t
r
- 100 - ns
t
d(off)
- 400 - ns
t
f
-3-µs
C
ies
- 3020 4830 pF
C
oes
- 220 - pF
C
res
-50-pF
Rth
JA
1
--50℃/W
Notes:
1.Surface mounted on 1 in
2
copper pad of

FR4 board ; 125℃/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
Thermal Resistance Junction-Ambient
V
GE
=4.5V
Fall Time
Input Capacitance
Output Capacitance
f=1.0MHz
V
GE
=± 6V, V
CE
=0V
T
STG
Turn-off Delay Time
V
GE
=0V
I
C
=15A
R
G
=10Ω
Rise Time
T
J
Gate-Collector Charge
Turn-on Delay Time
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current
A
Reverse Transfer Capacitance
V
CE
=450V, V
GE
=0V
V
GE
=3.3V, I
CP
=130A (Pulsed)
V
CE
=V
GE
, I
C
=250uA
I
C
=40A
V
CE
=360V
V
GE
=5V
V
CE
=25V
Test Conditions
AP28G45GEM
Symbol
V
CE
450V
130A
Rating
Collector-Emitter Voltage
Units
V450
± 6
130
± 8
Parameter
Storage Temperature Range
Pulsed Collector Current, V
GE
@ 3.3V
Parameter
Maximum Power Dissipation
V
GE
I
CP
I
GEP
Pulsed Gate-Emitter Voltage
P
D
@T
C
=25℃
1
Operating Junction Temperature Range
-55 to 150
-55 to 150
W
Pb Free Plating Product
V
2.5
201117031
℃
V
CC
=200V
℃
V
Gate-Emitter Voltage
Gate-Emitter Charge
G
C
E
E
E
E
G
C
C
C
C
SO-8