Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Repetitive Avalanche Rated BV
DSS
650V
▼ Fast Switching R
DS(ON)
1.0Ω
▼ Simple Drive Requirement I
D
10A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
T
STG
Storage Temperature Range ℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.4 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃ /W
Data & specifications subject to change without notice
36
Linear Derating Factor 0.3
Parameter Rating
650
6.4
-55 to 150
AP2761I-A
10
±30
10
Pb Free Plating Product
200706053-1/4
65
37
-55 to 150
G
D
S
G
D
S TO-220CFM(I)
AP2761 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.