Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BV
DSS
-30V
▼ Low On-resistance R
DS(ON)
170mΩ
▼ Surface Mount Package I
D
- 2A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 110 ℃/W
Data and specifications subject to change without notice 200614041
AP2623Y
Rating
-30
±20
-2
0.01
1.2
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
-1.6
Pulsed Drain Current
1
-20
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Linear Derating Factor
Thermal Data
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
D1
S1
G1
S2
G2
D2
SOT-26
G2
D2
S2
G1
D1
S1