Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Fast Switching Characteristic BV
DSS
-30V
▼ Lower Gate Charge R
DS(ON)
80mΩ
▼ Small Footprint & Low Profile Package I
D
- 4A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice 200202041
AP2605GY
Rating
-30
±20
-4
0.016
Continuous Drain Current
3
-3.3
Pulsed Drain Current
1
-20
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Pb Free Plating Product
-55 to 150
Linear Derating Factor
2
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
G
D
S
D
D
D
D
G
S
SOT-26