Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Capable of 2.5V gate drive BV
DSS
20V
▼ Lower on-resistance R
DS(ON)
34mΩ
▼ Surface mount package I
D
6.3A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃ /W
Data and specifications subject to change without notice 200629051-1/4
AP2602GY
Pb Free Plating Product
Parameter Rating
Drain-Source Voltage 20
Gate-Source Voltage ±12
Continuous Drain Current
3
, V
GS
@ 4.5V 6.3
Continuous Drain Current
3
, V
GS
@ 4.5V 5
Pulsed Drain Current
1,2
30
Total Power Dissipation 2
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.016
Thermal Data
Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
D
D
D
D
G
S
SOT-26