Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Low Gate Charge Drive N-CH BV
DSS
16V
▼ Low On-resistance R
DS(ON)
58mΩ
▼ Surface Mount Package I
D
3.5A
▼ RoHS Compliant P-CH BV
DSS
-16V
R
DS(ON)
125mΩ
Description I
D
-2.5A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage 16 -16 V
V
GS
Gate-Source Voltage ±8 ±8 V
I
D
@T
A
=25℃ Continuous Drain Current
3
3.5 -2.5 A
I
D
@T
A
=70℃ Continuous Drain Current
3
2.8 -2 A
I
DM
Pulsed Drain Current
1
10 -10 A
P
D
@T
A
=25℃ Total Power Dissipation 1.14 W
Linear Derating Factor 0.01 W/℃
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Thermal Data
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 110 ℃ /W
Data and specifications subject to change without notice
Parameter
200701051-1/7
AP2531GY
Pb Free Plating Product
G2
D2
S2
G1
D1
S1
D1
S1
G1
S2
G2
D2
SOT-26
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.