Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Capable of 2.5V gate drive N-CH BV
DSS
20V
▼ Lower on-resistance R
DS(ON)
37mΩ
▼ Surface mount package I
D
5A
P-CH BV
DSS
-20V
R
DS(ON)
75mΩ
Description I
D
-3.7A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage 20 -20 V
V
GS
Gate-Source Voltage ±12 ±12 V
I
D
@T
A
=25℃ Continuous Drain Current
3
5 -3.7 A
I
D
@T
A
=70℃ Continuous Drain Current
3
4 -3 A
I
DM
Pulsed Drain Current
1
20 -20 A
P
D
@T
A
=25℃ Total Power Dissipation 1.38 W
Linear Derating Factor 0.01 W/℃
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice
Parameter
200119051
Thermal Data
AP2451GY
Pb Free Plating Product
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
G2
D2
S2
G1
D1
S1
2928-8
D1
D2
D1
D2
G2
G1
S2
S1