Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Capable of 2.5V gate drive BV
DSS
30V
▼ Small outline package R
DS(ON)
720mΩ
▼ RoHS Compliant I
D
1A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 1.38
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.01
Continuous Drain Current
3
, V
GS
@ 4.5V 0.8
Pulsed Drain Current
1,2
2
Gate-Source Voltage ±16
Continuous Drain Current
3
, V
GS
@ 4.5V 1
Parameter Rating
Drain-Source Voltage 30
200811051-1/4
AP2318GEN
Pb Free Plating Product
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
G
D
S