Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
-30V
▼ Small Package Outline R
DS(ON)
75mΩ
▼ Surface Mount Device I
D
- 3.7A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice
-55 to 150
Linear Derating Factor
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
1.38
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
- 3
Pulsed Drain Current
1,2
-12
Pb Free Plating Product
200513041
AP2309GN
Rating
- 30
±20
- 3.7
0.01
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
D
G
S
SOT-23