AP2307GN
器件描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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器件资料摘要:
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
-16V
▼ Small Package Outline R
DS(ON)
60mΩ
▼ Surface Mount Device I
D
- 4A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice
Pb Free Plating Product
200414041
AP2307GN
Rating
-16
±8
-4
0.01
1.38
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
-3.3
Pulsed Drain Current
1
-12
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Linear Derating Factor
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
D
G
S
SOT-23