Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
-30V
▼ Small Package Outline R
DS(ON)
240mΩ
▼ Surface Mount Device I
D
- 1.9A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation 1.38
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current
3
-1.5
Pulsed Drain Current
1,2
-10
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
200407042
AP2303GN
Rating
- 30
± 20
-1.9
0.01
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness. G
D
S
D
G
S
SOT-23