Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
-20V
▼ 2.5V Gate Drive Capability R
DS(ON)
52mΩ
▼ Fast Switching I
D
-18A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data and specifications subject to change without notice 201225023
AP20P02GH/J
Rating
- 20
± 12
-18
0.25
Continuous Drain Current, V
GS
@ 10V -14
Pulsed Drain Current
1
-50
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Pb Free Plating Product
-55 to 150
Linear Derating Factor
31.25
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
G
D
S
G
D
S
TO-252(H)
G
D
S
TO-251(J)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20P02GJ) are available for low-profile applications.