Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BV
DSS
20V
▼ Low On-resistance R
DS(ON)
60mΩ
▼ Fast Switching I
D
2.6A
P-CH BV
DSS
-20V
R
DS(ON)
80mΩ
Description I
D
-2.3A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage 20 -20 V
V
GS
Gate-Source Voltage ±12 ±12 V
I
D
@T
A
=25℃ Continuous Drain Current
3
2.6 -2.3 A
I
D
@T
A
=70℃ Continuous Drain Current
3
2.1 -1.8 A
I
DM
Pulsed Drain Current
1
15 -10 A
P
D
@T
A
=25℃ Total Power Dissipation W
Linear Derating Factor W/℃
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice
Parameter
200728042
AP2030SD
Thermal Data
2
0.016
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G2
D2
S2
G1
D1
S1
D1
D1
D2
D2
S1
G1
S2
G2
PDIP-8