Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BV
DSS
30V
▼ Simple Drive Requirement R
DS(ON)
80mΩ
▼ Fast Switching Characteristic I
D
12A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 10 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W

Data & specifications subject to change without notice
AP15T03GH/J
Parameter Rating
Pb Free Plating Product
Drain-Source Voltage 30
Gate-Source Voltage ±20
Continuous Drain Current 12
Continuous Drain Current 6.4
Pulsed Drain Current
1
50
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.1
Storage Temperature Range
Total Power Dissipation 12.5
-55 to 150
200601041
Thermal Data
Parameter
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15T03GJ) is available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
TO-252(H)
G
D
S