Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Gate Drive BV
DSS
-20V
▼ Small Package Outline R
DS(ON)
800mΩ
▼ Fast Switching Speed I
D
-550mA
Description
Absolute Maximum Ratings
Symbol Unit
V
DS
V
V
GS
V
I
D
@T
A
=25℃ mA
I
D
@T
A
=70℃ mA
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 360 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
200720041
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.003
Storage Temperature Range
Pulsed Drain Current
1,2
2.5
Total Power Dissipation 0.35
Continuous Drain Current
3
-550
Continuous Drain Current
3
-440
Drain-Source Voltage -20
Gate-Source Voltage ±12
AP1333U
Parameter Rating
D
G
S
SOT-323
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
D
S