Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ SO-8 similar area footprint and pin assignment BV
DSS
30V
▼ Low Gate Charge R
DS(ON)
9mΩ
▼ Fast Switching Speed I
D
60A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=100℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
E
AS
Single Pulse Avalanche Energy
4
mJ
I
AR
Avalanche Current A
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃ /W
Rthj-a Thermal Resistance Junction-ambient
3
Max. 85 ℃ /W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 45
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.36
Continuous Drain Current, V
GS
@ 10V 38
Pulsed Drain Current
1
195
Gate-Source Voltage ±20
Continuous Drain Current, V
GS
@ 10V 60
Parameter Rating
Drain-Source Voltage 30
200401053-1/4
AP0903GMA
Pb Free Plating Product
29
24
G
D
S
S
S
S
G
D
APAK-5
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.