Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Dynamic dv/dt Rating BV
DSS
650V
▼ Repetitive Avalanche Rated R
DS(ON)
0.75Ω
▼ Fast Switching I
D
9A
▼ Simple Drive Requirement
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 0.8 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃ /W
Data & specifications subject to change without notice
AP09N70P-A
±30
Rating
650
Pb Free Plating Product
200705053-1/4
9
9
40
156
9
5
305
1.25
-55 to 150
Parameter
Storage Temperature Range -55 to 150
Drain-Source Voltage
Parameter
Linear Derating Factor
G
D
S
G
D
S
G
D
S
TO-220
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,AC-DC
converters for power applications.